PhD position: Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout (P2607)

The PhD project focuses on strained Ge/SiGe quantum‑well transistors that act as integrated cryogenic read‑out units for hole‑spin qubits. It is hosted by the University of Basel within the Swiss Nanoscience Institute (SNI), a research hub that brings together scientists working on quantum physics, material science, nanotechnology and related fields. On a daily basis the PhD candidate will combine material‑growth techniques, nanoscale device fabrication and low‑temperature transport measurements to build and test transistor‑based read‑out circuits placed close to the qubits. The work aims to create more compact and scalable read‑out architectures, thereby advancing planar germanium as a platform for large‑scale semiconductor quantum processors. The position requires a master‑level education in nanoscience, physics or a comparable engineering discipline. While prior hands‑on experience with device fabrication or transport experiments is not mandatory, it is regarded as advantageous. The successful applicant will join an active research community of roughly thirty PhD students and become part of the broader SNI PhD school. The appointment offers a full‑time, four‑year contract starting as early as 1 January 2027, with competitive employment terms and a supportive scientific and social environment. The candidate will benefit from close collaboration with leading groups in quantum nanoelectronics and from the interdisciplinary resources of the SNI. Applications must be submitted online before 31 December 2026, and the vacancy can be filled at any time thereafter. What the role asks for: - Master studies in nanoscience, physics or related engineering - Experience in fabrication (nice‑to‑have) - Experience in transport measurements (nice‑to‑have)